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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSF110N06NT3GXUMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 11 A; Package Style (Meter): CHIP CARRIER; Package Shape: RECTANGULAR; |
| Datasheet | BSF110N06NT3GXUMA1 Datasheet |
| In Stock | 8,649 |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 100 mJ |
| Package Body Material: | METAL |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 11 A |
| Maximum Pulsed Drain Current (IDM): | 188 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 60 V |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | R-MBCC-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Drain-Source On Resistance: | .011 ohm |
