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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSK313P |
| Description | P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Package Shape: RECTANGULAR; No. of Terminals: 8; |
| Datasheet | BSK313P Datasheet |
| In Stock | 933 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 3.2 A |
| Maximum Pulsed Drain Current (IDM): | 12.8 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 1.25 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G8 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .08 ohm |
| Avalanche Energy Rating (EAS): | 28 mJ |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum DS Breakdown Voltage: | 30 V |
| Qualification: | Not Qualified |
| Additional Features: | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
| Maximum Drain Current (Abs) (ID): | 3.2 A |
