BSL307SPL6327HTSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSL307SPL6327HTSA1
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 6; Peak Reflow Temperature (C): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	BSL307SPL6327HTSA1 Datasheet
In Stock	675,634

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	5.5 A
Maximum Pulsed Drain Current (IDM):	22 A
Surface Mount:	YES
No. of Terminals:	6
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.043 ohm
Avalanche Energy Rating (EAS):	44 mJ
Other Names:	2156-BSL307SPL6327HTSA1 BSL307SPL6327INDKR BSL307SPL6327HTSA1CT INFINFBSL307SPL6327HTSA1 SP000095798 BSL307SP L6327 BSL307SP L6327-ND BSL307SPL6327XT BSL307SPL6327INCT BSL307SPL6327HTSA1DKR BSL307SPL6327INTR BSL307SPL6327HTSA1TR 2156-BSL307SPL6327HTSA1-ITTR-ND BSL307SPL6327INTR-ND BSL307SPL6327INDKR-ND BSL307SPL6327INCT-ND BSL307SPL6327
Polarity or Channel Type:	P-CHANNEL
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
675,634	-	-

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