Infineon Technologies - BSL806N

BSL806N by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSL806N
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 2.3 A;
Datasheet BSL806N Datasheet
In Stock293
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .5 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 2.3 A
Maximum Drain Current (Abs) (ID): 2.3 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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