Infineon Technologies - BSM100GB170DL

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BSM100GB170DL by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM100GB170DL
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 960 W; Maximum Collector Current (IC): 200 A; No. of Elements: 1; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1700 V;
Datasheet BSM100GB170DL Datasheet
In Stock765
NAME DESCRIPTION
Maximum Collector Current (IC): 200 A
Maximum Power Dissipation (Abs): 960 W
Maximum Collector-Emitter Voltage: 1700 V
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3.3 V
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