Infineon Technologies - BSM100GB170DL

  1. Home
  2. Infineon Technologies - BSM100GB170DL
BSM100GB170DL by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BSM100GB170DL
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 960 W; Maximum Collector Current (IC): 200 A; No. of Elements: 1; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1700 V;
Datasheet BSM100GB170DL Datasheet
In Stock765
NAME DESCRIPTION
Maximum Collector Current (IC): 200 A
Maximum Power Dissipation (Abs): 960 W
Maximum Collector-Emitter Voltage: 1700 V
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3.3 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
765 - -

Popular Products

Category Top Products

IKA10N65ET6XKSA2 by Infineon Technologies

IKA10N65ET6XKSA2

Infineon Technologies

IKA10N65ET6XKSA2 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max IC of 25A. It is designed for POWER CONTROL applications, featuring a package style of FLANGE MOUNT and an operating temperature range from -40 to 175 °C.
IRGP4066D-EPBF by International Rectifier

IRGP4066D-EPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 454 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
FP25R12W1T7B11BPSA1 by Infineon Technologies

FP25R12W1T7B11BPSA1

Infineon Technologies

Infineon Technologies' FP25R12W1T7B11BPSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 25A max collector current, and 730ns nominal turn off time. Ideal for power control applications due to its complex configuration and silicon transistor element material.
IXGH16N170A by IXYS Corporation

IXGH16N170A

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Collector Current (IC): 16 A; Maximum Time At Peak Reflow Temperature (s): 10;
APT85GR120JD60 by Microsemi

APT85GR120JD60

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 116 A; Maximum Operating Temperature: 150 Cel;
APT30GP60BDQ1G by Microsemi

APT30GP60BDQ1G

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; No. of Elements: 1; Terminal Position: SINGLE;
IKW08T120FKSA1 by Infineon Technologies

IKW08T120FKSA1

Infineon Technologies

IKW08T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 16A. It has a nominal turn-off time of 710ns and nominal turn-on time of 66ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals for easy installation.
IRG4BC40SPBF by International Rectifier

IRG4BC40SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 60 A; No. of Terminals: 3;
IHW30N160R2FKSA1 by Infineon Technologies

IHW30N160R2FKSA1

Infineon Technologies

IHW30N160R2FKSA1 by Infineon is an N-CHANNEL IGBT with 1600V VCE, 60A IC, and 675ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 175°C, it has a FLANGE MOUNT style for COLLECTOR connection.
IKD04N60RFATMA1 by Infineon Technologies

IKD04N60RFATMA1

Infineon Technologies

IKD04N60RFATMA1 by Infineon is an N-CHANNEL IGBT with 600V max. collector-emitter voltage and 8A max. collector current. It has a built-in diode, 216ns turn-off time, and is ideal for power control applications requiring fast switching speeds in surface mount designs.
NGTB50N120FL2WG by Onsemi

NGTB50N120FL2WG

Onsemi

NGTB50N120FL2WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 100A IC, and 535W Pd. Ideal for high-power applications like motor drives, inverters, and power supplies due to its robust design and high operating temperature of 175°C.
FS820R08A6P2BBPSA1 by Infineon Technologies

FS820R08A6P2BBPSA1

Infineon Technologies

Infineon's FS820R08A6P2BBPSA1 is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED, CENTER TAP configuration. It has 6 elements, 820 A IC, and 714 W power dissipation for POWER CONTROL applications. With VCEsat of 1.35V and toff of 1110ns, it operates b/w -40 to 150 °C effectively.
CM900DU-24NF by Powerex

CM900DU-24NF

Powerex

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 900 A; Maximum Collector-Emitter Voltage: 1200 V; Transistor Element Material: SILICON;
FF450R12KE4HOSA1 by Infineon Technologies

FF450R12KE4HOSA1

Infineon Technologies

Infineon's FF450R12KE4HOSA1 IGBT features N-CHANNEL polarity, 2 elements with diode in series configuration. With VCEsat of 2.15V and IC of 520A, it suits high-power applications like motor drives and renewable energy systems. Operating at up to 150°C, it offers fast turn-off time (toff) of 800ns for efficient power control.
APT30GP60BDQ1G by Microchip Technology

APT30GP60BDQ1G

Microchip Technology

Microchip Technology's APT30GP60BDQ1G is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 100A. It is designed for power control applications, offering a nominal turn-off time of 165ns and a nominal turn-on time of 31ns.
APT45GP120J by Microchip Technology

APT45GP120J

Microchip Technology

APT45GP120J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 329W. It has a nominal turn-off time of 230ns and is suitable for power control applications. The transistor comes in a rectangular package style with flange mount, making it ideal for high-power electronic systems.
APT150GN120JDQ4 by Microchip Technology

APT150GN120JDQ4

Microchip Technology

Microchip Technology's APT150GN120JDQ4 is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 215A, and Ptot of 625W. Ideal for power control applications due to its fast turn-off time (toff) of 955ns and high collector-emitter voltage rating of 1200V. Package style is flange mount with isolated case connection.
VS-GT100DA120UF by Vishay Intertechnology

VS-GT100DA120UF

Vishay Intertechnology

VS-GT100DA120UF by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 187A max collector current. Ideal for power control applications, it features a single configuration with built-in diode, 490ns turn off time, and 208ns turn on time. UL approved and designed in a rectangular package style for flange mount.
FF600R17ME4BOSA1 by Infineon Technologies

FF600R17ME4BOSA1

Infineon Technologies

Infineon Technologies' FF600R17ME4BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1700V and max current of 950A, suitable for POWER CONTROL applications. With a toff of 980ns and ton of 320ns, it offers efficient switching in RECTANGULAR package style.
IRGR2B60KDTRLPBF by International Rectifier

IRGR2B60KDTRLPBF

International Rectifier

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 6.3 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 150 Cel;