Infineon Technologies - BSM10GD100D

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BSM10GD100D by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM10GD100D
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A; No. of Elements: 1; Maximum VCEsat: 2.8 V; Maximum Collector-Emitter Voltage: 1000 V;
Datasheet BSM10GD100D Datasheet
In Stock623
NAME DESCRIPTION
Maximum Collector Current (IC): 10 A
Maximum Power Dissipation (Abs): 50 W
Maximum Collector-Emitter Voltage: 1000 V
No. of Elements: 1
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.8 V
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