Infineon Technologies - BSM150GB120D

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BSM150GB120D by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM150GB120D
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 1200 W; Maximum Collector Current (IC): 150 A; Maximum VCEsat: 2.8 V; Maximum Collector-Emitter Voltage: 1000 V; No. of Elements: 1;
Datasheet BSM150GB120D Datasheet
In Stock542
NAME DESCRIPTION
Maximum Collector Current (IC): 150 A
Maximum Power Dissipation (Abs): 1200 W
Maximum Collector-Emitter Voltage: 1000 V
No. of Elements: 1
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.8 V
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