Infineon Technologies - BSM181/R

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BSM181/R by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM181/R
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 700 W; Maximum Drain-Source On Resistance: .24 ohm; JESD-30 Code: R-PUFM-X4;
Datasheet BSM181/R Datasheet
In Stock163
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 36 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 4
Minimum DS Breakdown Voltage: 800 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 700 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Additional Features: FRED FET
Maximum Drain Current (Abs) (ID): 36 A
Maximum Drain-Source On Resistance: .24 ohm
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