Infineon Technologies - BSM181F(C)

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BSM181F(C) by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM181F(C)
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 700 W; Package Shape: RECTANGULAR; Case Connection: ISOLATED;
Datasheet BSM181F(C) Datasheet
In Stock773
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 34 A
Maximum Pulsed Drain Current (IDM): 136 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 4
Minimum DS Breakdown Voltage: 800 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 700 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Drain Current (Abs) (ID): 34 A
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .32 ohm
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