BSM191(C) by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSM191(C)
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 700 W; Terminal Position: UPPER; Terminal Form: UNSPECIFIED;
Datasheet	BSM191(C) Datasheet
In Stock	243

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	28 A
Maximum Pulsed Drain Current (IDM):	112 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	4
Minimum DS Breakdown Voltage:	1000 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	700 W
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-X4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Drain Current (Abs) (ID):	28 A
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.37 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
243	-	-

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