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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSM191 |
| Description | Power Field-Effect Transistors; Maximum Power Dissipation (Abs): 700 W; Maximum Drain Current (ID): 28 A; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 28 A; |
| Datasheet | BSM191 Datasheet |
| In Stock | 61 |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | 700 W |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | 28 A |
| Maximum Drain Current (Abs) (ID): | 28 A |
| Sub-Category: | FET General Purpose Power |
