Infineon Technologies - BSM200GA120DL

  1. Home
  2. Infineon Technologies - BSM200GA120DL
BSM200GA120DL by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BSM200GA120DL
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 1400 W; Maximum Collector Current (IC): 360 A; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet BSM200GA120DL Datasheet
In Stock962
NAME DESCRIPTION
Maximum Collector Current (IC): 360 A
Maximum Power Dissipation (Abs): 1400 W
Maximum Collector-Emitter Voltage: 1200 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.6 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
962 - -

Popular Products

Category Top Products

IRG4PC50FPBF by Infineon Technologies

IRG4PC50FPBF

Infineon Technologies

IRG4PC50FPBF by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 70A max collector current. It has a 190ns max fall time, making it suitable for high-power applications like motor drives and inverters. The package style is flange mount with through-hole terminals.
IKP20N60TXKSA1 by Infineon Technologies

IKP20N60TXKSA1

Infineon Technologies

IKP20N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 40A. It is designed for power control applications, offering a nominal turn-off time of 299ns and a nominal turn-on time of 36ns.
IXXH75N60C3 by IXYS Corporation

IXXH75N60C3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 150 A; Case Connection: COLLECTOR;
FF600R12ME4AB11BPSA1 by Infineon Technologies

FF600R12ME4AB11BPSA1

Infineon Technologies

Insulated Gate Bipolar Transistors;
FGL60N100BNTD by Fairchild Semiconductor

FGL60N100BNTD

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 60 A; Terminal Finish: MATTE TIN;
STGP20V60DF by STMicroelectronics

STGP20V60DF

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Peak Reflow Temperature (C): NOT SPECIFIED;
IRGR2B60KDPBF by Infineon Technologies

IRGR2B60KDPBF

Infineon Technologies

Infineon's IRGR2B60KDPBF is an N-CHANNEL IGBT with 600V VCE, 6.3A IC, and 35W power dissipation. Ideal for surface mount applications, it offers fast tr of 25ns and tf of 75ns. This device operates up to 150°C making it suitable for various power electronics systems.
IXXX160N65B4 by IXYS Corporation

IXXX160N65B4

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 310 A; Transistor Element Material: SILICON;
IRG4BC40KPBF by International Rectifier

IRG4BC40KPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 42 A; Package Shape: RECTANGULAR;
IXYN100N120C3 by IXYS Corporation

IXYN100N120C3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 830 W; Maximum Collector Current (IC): 152 A; Nominal Turn Off Time (toff): 265 ns;
STGP10NC60HD by STMicroelectronics

STGP10NC60HD

STMicroelectronics

STGP10NC60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 9A max collector current, and 60W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 247ns.
APT75GP120JDQ3 by Microsemi

APT75GP120JDQ3

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 128 A; Maximum Collector-Emitter Voltage: 1200 V;
APT30GP60BDQ1G by Microchip Technology

APT30GP60BDQ1G

Microchip Technology

Microchip Technology's APT30GP60BDQ1G is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 100A. It is designed for power control applications, offering a nominal turn-off time of 165ns and a nominal turn-on time of 31ns.
STGB30M65DF2 by STMicroelectronics

STGB30M65DF2

STMicroelectronics

STGB30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 2V VCEsat. Ideal for POWER CONTROL applications due to its built-in diode, low turn-off time of 310ns, and high power dissipation of 258W. Suitable for surface mount with gull wing terminals in a small outline package.
IRG7PH42U-EP by International Rectifier

IRG7PH42U-EP

International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 385 W; Maximum Collector Current (IC): 90 A; Maximum Gate-Emitter Threshold Voltage: 6 V; Terminal Finish: MATTE TIN OVER NICKEL;
CM1000E3U-34NF by Powerex

CM1000E3U-34NF

Powerex

Powerex CM1000E3U-34NF is an N-CHANNEL IGBT with 1700V VCE, 1000A IC, and 150°C max temp. Ideal for power control applications due to its single configuration with built-in diode and flange mount package style.
FS50R06W1E3BOMA1 by Infineon Technologies

FS50R06W1E3BOMA1

Infineon Technologies

Infineon's FS50R06W1E3BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector current of 70A, and turn off time of 370ns. Ideal for power control applications, it operates at up to 175°C with a max. collector-emitter voltage of 600V in a rectangular package style.
IRG4BC30FD1PBF by International Rectifier

IRG4BC30FD1PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Maximum Operating Temperature: 150 Cel;
SKM100GB12T4 by Semikron International

SKM100GB12T4

Semikron International

SKM100GB12T4 by Semikron International is an N-CHANNEL IGBT with a max VCEsat of 2.05V and a max collector current (IC) of 160A. It is commonly used for power control applications due to its high voltage rating of 1200V and temperature tolerance up to 175°C.
SGD02N60BUMA1 by Infineon Technologies

SGD02N60BUMA1

Infineon Technologies

Infineon's SGD02N60BUMA1 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 6A max collector current. Ideal for motor control applications, it has a turn-off time of 354ns and turn-on time of 34ns. This surface-mount device in a rectangular package is designed for efficient power management at up to 150°C operating temperature.