Infineon Technologies - BSM20GD60DN2

BSM20GD60DN2 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSM20GD60DN2
Description	Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 90 W; Maximum Collector Current (IC): 20 A; Maximum VCEsat: 2.7 V; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 20 V;
Datasheet	BSM20GD60DN2 Datasheet
In Stock	295

BSM20GD60DN2 Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	20 A
Maximum Power Dissipation (Abs):	90 W
Maximum Collector-Emitter Voltage:	600 V
No. of Elements:	1
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Maximum VCEsat:	2.7 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
295	-	-

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