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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSM252F |
| Description | Power Field-Effect Transistors; Maximum Power Dissipation (Abs): 225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 18 A; No. of Elements: 1; Maximum Drain Current (ID): 18 A; |
| Datasheet | BSM252F Datasheet |
| In Stock | 798 |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | 225 W |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Maximum Drain Current (ID): | 18 A |
| Maximum Drain Current (Abs) (ID): | 18 A |
| Sub-Category: | FET General Purpose Power |
