Infineon Technologies - BSM25GB100D

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BSM25GB100D by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM25GB100D
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 225 W; Maximum Collector Current (IC): 25 A; Terminal Form: UNSPECIFIED;
Datasheet BSM25GB100D Datasheet
In Stock356
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 25 A
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 7
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 225 W
Maximum Collector-Emitter Voltage: 1000 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 30 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X7
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 5 V
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