Infineon Technologies - BSM25GB120D

  1. Home
  2. Infineon Technologies - BSM25GB120D
BSM25GB120D by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BSM25GB120D
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 25 A; Maximum VCEsat: 2.8 V; Maximum Collector-Emitter Voltage: 1200 V; No. of Elements: 1;
Datasheet BSM25GB120D Datasheet
In Stock993
NAME DESCRIPTION
Maximum Collector Current (IC): 25 A
Maximum Power Dissipation (Abs): 300 W
Maximum Collector-Emitter Voltage: 1200 V
No. of Elements: 1
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.8 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
993 - -

Popular Products

Category Top Products

IXA70I1200NA by Littelfuse

IXA70I1200NA

Littelfuse

IXA70I1200NA by Littelfuse is an N-CHANNEL IGBT with 1200V VCEsat, 100A IC, and 350W power dissipation. Ideal for power control applications, it features a fast turn-off time of 350ns and operates b/w -40 to 150°C.
IKW75N65EL5XKSA1 by Infineon Technologies

IKW75N65EL5XKSA1

Infineon Technologies

IKW75N65EL5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 474ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. The transistor has a RECTANGULAR shape with THROUGH-HOLE terminals for FLANGE MOUNT installation.
APT50GR120JD30 by Microchip Technology

APT50GR120JD30

Microchip Technology

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 417 W; Maximum Collector Current (IC): 84 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
FP15R06W1E3BOMA1 by Infineon Technologies

FP15R06W1E3BOMA1

Infineon Technologies

FP15R06W1E3BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 23 terminals, and a max collector current of 15 A. It has a nominal turn-off time of 260 ns and a max operating temperature of 175°C. This complex transistor is commonly used in power control applications due to its silicon element material and isolated case connection.
IXGN100N170 by IXYS Corporation

IXGN100N170

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 735 W; Maximum Collector Current (IC): 160 A; Transistor Element Material: SILICON;
IHW30N160R5XKSA1 by Infineon Technologies

IHW30N160R5XKSA1

Infineon Technologies

IHW30N160R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max IC of 60A. It is designed for power control applications, featuring a built-in diode, 1600V max collector-emitter voltage, and 263W max power dissipation.
NGTB15N120IHRWG by Onsemi

NGTB15N120IHRWG

Onsemi

Insulated Gate Bipolar Transistors; Terminal Finish: Matte Tin (Sn) - annealed; JESD-609 Code: e3;
FF450R12KT4F by Infineon Technologies

FF450R12KT4F

Infineon Technologies

Infineon's FF450R12KT4F is an N-Channel IGBT with VCEsat of 2.15V, IC of 580A, and Ptot of 2400W. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems due to its low turn-off time (720ns) and high collector-emitter voltage (1200V).
CM400DY-24NF by Mitsubishi Electric

CM400DY-24NF

Mitsubishi Electric

Mitsubishi Electric's CM400DY-24NF is a N-CHANNEL IGBT with 2 elements, 7 terminals, and max IC of 400A. Ideal for power control applications with VCEsat of 2.5V, VCEmax of 1200V, and Pmax of 1470W. Operates up to 150°C temp with gate-emitter voltage at 20V for efficient power management.
FS150R12KT4 by Infineon Technologies

FS150R12KT4

Infineon Technologies

Infineon FS150R12KT4 is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. It has a toff of 605ns and ton of 165ns, suitable for high-power applications. With a Vce(max) of 1200V and Tj(max) of 150°C, it's commonly used in power electronics for efficient switching operations.
IKD04N60RATMA1 by Infineon Technologies

IKD04N60RATMA1

Infineon Technologies

IKD04N60RATMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 8A max collector current, and 20ns turn on time. Ideal for power control applications due to its 75W max power dissipation and built-in diode configuration. Package style is small outline with gull wing terminals.
HGTG40N60C3 by Intersil

HGTG40N60C3

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 435 ns; Transistor Element Material: SILICON;
FGH40N60SMDF by Fairchild Semiconductor

FGH40N60SMDF

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 80 A; No. of Elements: 1;
IXGH60N60C3D1 by IXYS Corporation

IXGH60N60C3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 380 W; Maximum Collector Current (IC): 75 A; Package Body Material: PLASTIC/EPOXY;
STGW20NC60VD by STMicroelectronics

STGW20NC60VD

STMicroelectronics

STGW20NC60VD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 60A max collector current, and 200W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and a nominal turn-off time of 280ns.
FGH40N60UFDTU by Fairchild Semiconductor

FGH40N60UFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Nominal Turn On Time (ton): 110 ns;
SGB02N120ATMA1 by Infineon Technologies

SGB02N120ATMA1

Infineon Technologies

SGB02N120ATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 6.2A. It has a nominal turn-off time of 375ns, making it suitable for power control applications requiring fast switching speeds. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.
SKM200GB126D by Semikron International

SKM200GB126D

Semikron International

SKM200GB126D by Semikron is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a VCEsat of 2.15V, IC of 260A, and toff of 650ns. Ideal for POWER CONTROL applications due to its high voltage rating of 1200V and fast ton at 300ns.
STGP15M120F3 by STMicroelectronics

STGP15M120F3

STMicroelectronics

STGP15M120F3 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector-emitter voltage of 1200V. It is used for power control applications, offering a nominal turn off time of 406ns and a max collector current of 30A.
IRG4PC50UD-EPBF by International Rectifier

IRG4PC50UD-EPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 55 A; Nominal Turn Off Time (toff): 370 ns; Case Connection: COLLECTOR;