Infineon Technologies - BSM25GD100D

BSM25GD100D by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM25GD100D
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 25 A; Maximum Collector-Emitter Voltage: 1000 V;
Datasheet BSM25GD100D Datasheet
In Stock37
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 25 A
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 17
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 300 W
Maximum Collector-Emitter Voltage: 1000 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 30 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-D17
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: SOLDER LUG
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 4.5 V
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