Infineon Technologies - BSM300GA120D

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BSM300GA120D by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM300GA120D
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 300 A; Maximum Collector-Emitter Voltage: 1200 V; JESD-30 Code: R-PUFM-X4;
Datasheet BSM300GA120D Datasheet
In Stock474
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 300 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Turn On Time (ton): 270 ns
Maximum Gate-Emitter Threshold Voltage: 6.2 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 4
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 220 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 3.3 V
Maximum Power Dissipation Ambient: 2500 W
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