Infineon Technologies - BSM30GD60DN2

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BSM30GD60DN2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM30GD60DN2
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 30 A; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 2.7 V; Maximum Collector-Emitter Voltage: 600 V;
Datasheet BSM30GD60DN2 Datasheet
In Stock610
NAME DESCRIPTION
Maximum Collector Current (IC): 30 A
Maximum Power Dissipation (Abs): 125 W
Maximum Collector-Emitter Voltage: 600 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.7 V
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