Infineon Technologies - BSM50GD60DN2E3226

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BSM50GD60DN2E3226 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM50GD60DN2E3226
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 50 A; No. of Elements: 1; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 2.7 V;
Datasheet BSM50GD60DN2E3226 Datasheet
In Stock442
NAME DESCRIPTION
Maximum Collector Current (IC): 50 A
Maximum Power Dissipation (Abs): 200 W
Maximum Collector-Emitter Voltage: 600 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.7 V
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