BSM691F by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSM691F
Description	N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Qualification: Not Qualified; Maximum Drain Current (ID): 4.8 A;
Datasheet	BSM691F Datasheet
In Stock	398

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	4.8 A
Maximum Pulsed Drain Current (IDM):	19 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	17
Maximum Power Dissipation (Abs):	125 W
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-D17
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	SOLDER LUG
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	2.5 ohm
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	1000 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	4.8 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
398	-	-

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