Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSM692F |
| Description | N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 225 W; Case Connection: ISOLATED; No. of Elements: 6; |
| Datasheet | BSM692F Datasheet |
| In Stock | 691 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 9 A |
| Maximum Pulsed Drain Current (IDM): | 36 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | NO |
| No. of Terminals: | 17 |
| Maximum Power Dissipation (Abs): | 225 W |
| Terminal Position: | UPPER |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PUFM-D17 |
| No. of Elements: | 6 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | SOLDER LUG |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Maximum Drain-Source On Resistance: | 1.25 ohm |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 1000 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 9 A |
