Infineon Technologies - BSM75GAL100D

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BSM75GAL100D by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM75GAL100D
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 75 A; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 3.3 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet BSM75GAL100D Datasheet
In Stock71
NAME DESCRIPTION
Maximum Collector Current (IC): 75 A
Maximum Power Dissipation (Abs): 625 W
Maximum Collector-Emitter Voltage: 1000 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3.3 V
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