Infineon Technologies - BSM75GAL100D

BSM75GAL100D by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSM75GAL100D
Description	Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 75 A; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 3.3 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet	BSM75GAL100D Datasheet
In Stock	71

BSM75GAL100D Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	75 A
Maximum Power Dissipation (Abs):	625 W
Maximum Collector-Emitter Voltage:	1000 V
No. of Elements:	1
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Maximum VCEsat:	3.3 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
71	-	-

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