Infineon Technologies - BSM75GAL120DN2HOSA1

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BSM75GAL120DN2HOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM75GAL120DN2HOSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 105 A; JESD-30 Code: R-XUFM-X7; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet BSM75GAL120DN2HOSA1 Datasheet
In Stock730
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 105 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 520 ns
No. of Terminals: 7
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 100 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X7
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
730 $74.200 $54,166.000

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