BSO080P03SNTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSO080P03SNTMA1
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 30 V; Package Style (Meter): SMALL OUTLINE;
Datasheet	BSO080P03SNTMA1 Datasheet
In Stock	481

NAME	DESCRIPTION
Other Names:	BSO080P03S-ND BSO080P03SNTMA1DKR BSO080P03SINCT BSO080P03SINDKR-ND BSO080P03SINTR BSO080P03SNTMA1CT BSO080P03SNT BSO080P03SINCT-ND BSO080P03SINDKR BSO080P03S BSO080P03ST BSO080P03SINTR-ND BSO080P03SNTMA1TR SP000014958
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	1500 pF
Maximum Drain Current (ID):	12.6 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	8
Minimum DS Breakdown Voltage:	30 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Maximum Drain-Source On Resistance:	.008 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
481	-	-

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