Infineon Technologies - BSO150N03MDGXUMA1

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BSO150N03MDGXUMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSO150N03MDGXUMA1
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G8; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 30 V;
Datasheet BSO150N03MDGXUMA1 Datasheet
In Stock5,665
NAME DESCRIPTION
Other Names: BSO150N03MD GDKR
BSO150N03MDGXUMA1CT
BSO150N03MD G
BSO150N03MD G-ND
SP000447476
BSO150N03MD GDKR-ND
BSO150N03MD GCT-ND
BSO150N03MD GTR-ND
BSO150N03MDGXUMA1TR
BSO150N03MDGXUMA1DKR
2156-BSO150N03MDGXUMA1TR
BSO150N03MD GCT
BSO150N03MDG
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 7 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .015 ohm
Moisture Sensitivity Level (MSL): 3
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