Infineon Technologies - BSO203P

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BSO203P by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSO203P
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Peak Reflow Temperature (C): 235;
Datasheet BSO203P Datasheet
In Stock701
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 8.2 A
Maximum Pulsed Drain Current (IDM): 32.8 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .021 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 97 mJ
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 8.2 A
Peak Reflow Temperature (C): 235
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Pricing (USD)

Qty. Unit Price Ext. Price
701 $0.569 $398.869

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