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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSO303PHXUMA1 |
| Description | P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain Current (ID): 7 A; JESD-609 Code: e3; |
| Datasheet | BSO303PHXUMA1 Datasheet |
| In Stock | 1,143 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 7 A |
| Maximum Pulsed Drain Current (IDM): | 32.8 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G8 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .021 ohm |
| Moisture Sensitivity Level (MSL): | 3 |
| Avalanche Energy Rating (EAS): | 97 mJ |
| Other Names: |
2156-BSO303PHXUMA1 BSO303P HDKR-ND SP000613854 BSO303PHXUMA1CT BSO303P H BSO303PH BSO303P HDKR BSO303P HCT IFEINFBSO303PHXUMA1 BSO303P HCT-ND BSO303PHXUMA1TR BSO303P H-ND BSO303P HTR-ND BSO303PHXUMA1DKR |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 30 V |
| Qualification: | Not Qualified |
| Additional Features: | LOGIC LEVEL COMPATIBLE |
