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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSO330N02KGFUMA1 |
| Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 26 A; Terminal Form: GULL WING; |
| Datasheet | BSO330N02KGFUMA1 Datasheet |
| In Stock | 2,274 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 4.2 A |
| Maximum Pulsed Drain Current (IDM): | 26 A |
| Surface Mount: | YES |
| No. of Terminals: | 8 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G8 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .03 ohm |
| Avalanche Energy Rating (EAS): | 19 mJ |
| Other Names: |
IFEINFBSO330N02KGFUMA1 BSO330N02K GINDKR-ND BSO330N02K G-ND 2156-BSO330N02KGFUMA1-ITTR BSO330N02KGFUMA1TR BSO330N02KGFUMA1DKR BSO330N02K G BSO330N02K GINTR SP000380284 BSO330N02K GINCT BSO330N02KG BSO330N02K GINDKR BSO330N02K GINCT-ND BSO330N02KGFUMA1CT BSO330N02K GINTR-ND |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 20 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
