BSP149H6327 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSP149H6327
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 200 V; Maximum Drain Current (ID): .66 A;
Datasheet	BSP149H6327 Datasheet
In Stock	2,312

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.66 A
Maximum Pulsed Drain Current (IDM):	2.6 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
No. of Terminals:	4
Minimum DS Breakdown Voltage:	200 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	DEPLETION MODE
Reference Standard:	AEC-Q101
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	1.8 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,312	-	-

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