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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | BSP149L6327HTSA1 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .66 A; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING; |
Datasheet | BSP149L6327HTSA1 Datasheet |
In Stock | 1,245 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | .66 A |
Maximum Pulsed Drain Current (IDM): | 2.6 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
JESD-609 Code: | e3 |
No. of Terminals: | 4 |
Minimum DS Breakdown Voltage: | 200 V |
Qualification: | Not Qualified |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | DEPLETION MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | 1.8 ohm |