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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | BSP171PL6327XT |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; |
Datasheet | BSP171PL6327XT Datasheet |
In Stock | 595 |
NAME | DESCRIPTION |
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Avalanche Energy Rating (EAS): | 70 mJ |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 1.9 A |
Maximum Pulsed Drain Current (IDM): | 7.6 A |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
JESD-609 Code: | e3 |
No. of Terminals: | 4 |
Minimum DS Breakdown Voltage: | 60 V |
Qualification: | Not Qualified |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Additional Features: | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .3 ohm |