Infineon Technologies - BSP171PL6327XT

BSP171PL6327XT by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSP171PL6327XT
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
Datasheet BSP171PL6327XT Datasheet
In Stock595
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 70 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 1.9 A
Maximum Pulsed Drain Current (IDM): 7.6 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 4
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .3 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
595 - -

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