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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSP295L6327HTSA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Drain-Source On Resistance: .5 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | BSP295L6327HTSA1 Datasheet |
| In Stock | 178,325 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 1.8 A |
| Maximum Pulsed Drain Current (IDM): | 7.2 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| JESD-609 Code: | e3 |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 60 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Reference Standard: | AEC-Q101 |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .5 ohm |
