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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSP372L6327HTSA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 100 V; Maximum Pulsed Drain Current (IDM): 6.8 A; Package Body Material: PLASTIC/EPOXY; |
| Datasheet | BSP372L6327HTSA1 Datasheet |
| In Stock | 1,491 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 1.7 A |
| Maximum Pulsed Drain Current (IDM): | 6.8 A |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .31 ohm |
| Avalanche Energy Rating (EAS): | 45 mJ |
| Other Names: |
BSP372L6327INCT BSP372L6327INCT-ND BSP372 L6327-ND BSP372L6327INDKR-ND 2156-BSP372L6327HTSA1-ITTR INFINFBSP372L6327HTSA1 BSP372L6327HTSA1DKR BSP372L6327 BSP372L6327HTSA1TR BSP372L6327HTSA1CT BSP372L6327INTR BSP372L6327XT BSP372L6327INDKR BSP372L6327INTR-ND SP000087064 BSP372 L6327 |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 100 V |
| Qualification: | Not Qualified |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
