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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSP603S2LNT |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOGIC LEVEL COMPATIBLE; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G4; |
| Datasheet | BSP603S2LNT Datasheet |
| In Stock | 30,122 |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 150 mJ |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 5.2 A |
| Maximum Pulsed Drain Current (IDM): | 21 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 55 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Additional Features: | LOGIC LEVEL COMPATIBLE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .04 ohm |
