BSP613PL6327HUSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSP613PL6327HUSA1
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Additional Features: AVALANCHE RATED; Maximum Drain Current (ID): 2.9 A;
Datasheet	BSP613PL6327HUSA1 Datasheet
In Stock	1,291

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	150 mJ
Other Names:	BSP613P L6327 BSP613PL6327INTR BSP613PL6327XT BSP613PL6327HUSA1DKR BSP613PL6327INDKR-ND BSP613PL6327 BSP613PL6327INCT-ND BSP613P L6327-ND BSP613PL6327INCT BSP613PL6327HUSA1TR BSP613PL6327INDKR BSP613PL6327HUSA1CT BSP613PL6327INTR-ND SP000089224
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	2.9 A
Maximum Pulsed Drain Current (IDM):	11.6 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	60 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED
Reference Standard:	AEC-Q101
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.13 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,291	-	-

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TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Form: GULL WING;