Infineon Technologies - BSP89L6327HTSA1

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BSP89L6327HTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSP89L6327HTSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL;
Datasheet BSP89L6327HTSA1 Datasheet
In Stock264
NAME DESCRIPTION
Other Names: BSP89L6327HTSA1CT
BSP89L6327INDKR-ND
BSP89L6327
BSP89L6327INTR
BSP89L6327INTR-ND
BSP89L6327XT
BSP89L6327HTSA1DKR
BSP89L6327INDKR
BSP89 L6327-ND
SP000089216
BSP89L6327INCT-ND
BSP89L6327INCT
BSP89L6327HTSA1TR
BSP89 L6327
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .35 A
Maximum Pulsed Drain Current (IDM): 1.4 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 240 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Reference Standard: AEC-Q101
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 6 ohm
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