Infineon Technologies - BSP92PH6327

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BSP92PH6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSP92PH6327
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 250 V; Maximum Pulsed Drain Current (IDM): 1.04 A; Operating Mode: ENHANCEMENT MODE;
Datasheet BSP92PH6327 Datasheet
In Stock4,594
NAME DESCRIPTION
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .26 A
Maximum Pulsed Drain Current (IDM): 1.04 A
Polarity or Channel Type: P-CHANNEL
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 250 V
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE
Reference Standard: AEC-Q101
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 12 ohm
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