Infineon Technologies - BSS129E-6325

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BSS129E-6325 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSS129E-6325
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Package Shape: ROUND; Minimum DS Breakdown Voltage: 240 V;
Datasheet BSS129E-6325 Datasheet
In Stock45
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .15 A
JEDEC-95 Code: TO-92
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 240 V
Qualification: Not Qualified
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Operating Mode: DEPLETION MODE
Maximum Drain-Source On Resistance: 20 ohm
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