Infineon Technologies - BSS192E6327

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BSS192E6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSS192E6327
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: 20 ohm;
Datasheet BSS192E6327 Datasheet
In Stock657
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 15 pF
Maximum Drain Current (ID): .15 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 3
Minimum DS Breakdown Voltage: 240 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 1 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 20 ohm
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