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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSS192PL6327HTSA1 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): SMALL OUTLINE; |
| Datasheet | BSS192PL6327HTSA1 Datasheet |
| In Stock | 1,936 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | .19 A |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 1 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-F3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | 12 ohm |
| Other Names: |
BSS192PL6327XT BSS192PL6327 BSS192PL6327HTSA1DKR SP000095795 BSS192P L6327-ND BSS192PL6327INTR-ND BSS192PL6327INCT BSS192PL6327INCT-ND BSS192PL6327INDKR-ND BSS192P L6327 BSS192PL6327HTSA1TR BSS192PL6327INTR BSS192PL6327INDKR BSS192PL6327HTSA1CT |
| Maximum Feedback Capacitance (Crss): | 8 pF |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 250 V |
| Additional Features: | LOGIC LEVEL COMPATIBLE |
| Reference Standard: | AEC-Q101 |









