BSS670S2LH6433XTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSS670S2LH6433XTMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 10 pF; Maximum Drain Current (ID): .54 A; Operating Mode: ENHANCEMENT MODE;
Datasheet	BSS670S2LH6433XTMA1 Datasheet
In Stock	16,045

NAME	DESCRIPTION
Other Names:	SP001341854 448-BSS670S2LH6433XTMA1CT 448-BSS670S2LH6433XTMA1TR 448-BSS670S2LH6433XTMA1DKR BSS670S2LH6433XTMA1-ND
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	10 pF
Maximum Drain Current (ID):	.54 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	55 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.825 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
16,045	-	-

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