Infineon Technologies - BSV236SPH6327

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BSV236SPH6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSV236SPH6327
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Reference Standard: AEC-Q101; Package Body Material: PLASTIC/EPOXY;
Datasheet BSV236SPH6327 Datasheet
In Stock578
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 1.5 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .175 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
578 $0.440 $254.320

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