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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | BSZ023N04LSATMA1 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Drain Current (Abs) (ID): 40 A; Terminal Position: DUAL; |
Datasheet | BSZ023N04LSATMA1 Datasheet |
In Stock | 230 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 22 A |
Maximum Pulsed Drain Current (IDM): | 160 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
No. of Terminals: | 8 |
Maximum Power Dissipation (Abs): | 69 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | S-PDSO-F8 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .0032 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 130 mJ |
Polarity or Channel Type: | N-CHANNEL |
Minimum DS Breakdown Voltage: | 40 V |
Additional Features: | ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE |
Maximum Drain Current (Abs) (ID): | 40 A |