Infineon Technologies - BSZ023N04LSATMA1

BSZ023N04LSATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSZ023N04LSATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Drain Current (Abs) (ID): 40 A; Terminal Position: DUAL;
Datasheet BSZ023N04LSATMA1 Datasheet
In Stock230
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 22 A
Maximum Pulsed Drain Current (IDM): 160 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 69 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0032 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 130 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 40 V
Additional Features: ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID): 40 A
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Pricing (USD)

Qty. Unit Price Ext. Price
230 - -

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