Infineon Technologies - BSZ110N06NS3GATMA1

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BSZ110N06NS3GATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSZ110N06NS3GATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 11 A; Moisture Sensitivity Level (MSL): 1; Avalanche Energy Rating (EAS): 55 mJ;
Datasheet BSZ110N06NS3GATMA1 Datasheet
In Stock18,739
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 11 A
Maximum Pulsed Drain Current (IDM): 80 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .011 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 55 mJ
Other Names: BSZ110N06NS3 GDKR-ND
SP000453676
BSZ110N06NS3 G
BSZ110N06NS3GATMA1TR
BSZ110N06NS3GINTR
2156-BSZ110N06NS3GATMA1
BSZ110N06NS3GINTR-ND
BSZ110N06NS3GATMA1DKR
BSZ110N06NS3G
BSZ110N06NS3GATMA1CT
BSZ110N06NS3GINDKR-ND
BSZ110N06NS3GINCT
BSZ110N06NS3GINCT-ND
BSZ110N06NS3 GDKR
INFINFBSZ110N06NS3GATMA1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
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