Infineon Technologies - BSZ160N10NS3GXT

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BSZ160N10NS3GXT by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSZ160N10NS3GXT
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Transistor Application: SWITCHING; Maximum Pulsed Drain Current (IDM): 160 A;
Datasheet BSZ160N10NS3GXT Datasheet
In Stock4,813
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 80 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 40 A
Maximum Pulsed Drain Current (IDM): 160 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 8
Minimum DS Breakdown Voltage: 100 V
Maximum Power Dissipation (Abs): 63 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .016 ohm
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