Infineon Technologies - BSZ215CH

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BSZ215CH by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSZ215CH
Description N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Avalanche Energy Rating (EAS): 11 mJ; Maximum Pulsed Drain Current (IDM): 20 A;
Datasheet BSZ215CH Datasheet
In Stock689
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 5.1 A
Maximum Pulsed Drain Current (IDM): 20 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .055 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 11 mJ
Maximum Feedback Capacitance (Crss): 24 pF
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 20 V
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
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