BSZ22DN20NS3GATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSZ22DN20NS3GATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 30 mJ; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	BSZ22DN20NS3GATMA1 Datasheet
In Stock	8,762

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	7 A
Maximum Pulsed Drain Current (IDM):	28 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N8
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.225 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	30 mJ
Other Names:	BSZ22DN20NS3G BSZ22DN20NS3GTR 2156-BSZ22DN20NS3GATMA1 BSZ22DN20NS3GDKR-ND BSZ22DN20NS3GATMA1DKR SP000781794 BSZ22DN20NS3GDKR BSZ22DN20NS3GCT-ND BSZ22DN20NS3GTR-ND BSZ22DN20NS3GATMA1TR IFEINFBSZ22DN20NS3GATMA1 BSZ22DN20NS3GCT BSZ22DN20NS3GATMA1CT BSZ22DN20NS3 G
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	200 V
Qualification:	Not Qualified

Pricing (USD)

Qty.	Unit Price	Ext. Price
8,762	-	-

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