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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSZ900N20NS3GATMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 15.2 A; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | BSZ900N20NS3GATMA1 Datasheet |
| In Stock | 15,396 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 15.2 A |
| Maximum Pulsed Drain Current (IDM): | 61 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-N8 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .09 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 100 mJ |
| Other Names: |
BSZ900N20NS3GTR-ND BSZ900N20NS3GATMA1CT BSZ900N20NS3GCT BSZ900N20NS3G BSZ900N20NS3 G 2156-BSZ900N20NS3GATMA1 BSZ900N20NS3GTR BSZ900N20NS3GDKR-ND BSZ900N20NS3GATMA1DKR BSZ900N20NS3GDKR BSZ900N20NS3GATMA1TR SP000781806 BSZ900N20NS3GCT-ND INFINFBSZ900N20NS3GATMA1 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 200 V |
| Qualification: | Not Qualified |
