Infineon Technologies - BTS112ANKSA1

BTS112ANKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BTS112ANKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Feedback Capacitance (Crss): 90 pF; Operating Mode: ENHANCEMENT MODE;
Datasheet BTS112ANKSA1 Datasheet
In Stock383
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton): 70 ns
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 48 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 40 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 130 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .15 ohm
Maximum Feedback Capacitance (Crss): 90 pF
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
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Pricing (USD)

Qty. Unit Price Ext. Price
383 $2.320 $888.560

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